Simulation of Five Layers Solid-State Memory Capacitor

dc.contributor.advisorBekele, Mulugeta (PhD)
dc.contributor.authorKebede, Eyob
dc.date.accessioned2022-03-31T07:57:28Z
dc.date.accessioned2023-11-18T09:53:13Z
dc.date.available2022-03-31T07:57:28Z
dc.date.available2023-11-18T09:53:13Z
dc.date.issued2010-07
dc.description.abstractTn t his work we provided th e simulation of a five layer charge-cont rolled memory capacitor in which periodic and non-period ic metamaterials are embeddcd between the plates of a rcgul ar paralic! plate capacitor. The simulation result shows hysteretic, negative and diverging in capacitance-voltage behavior and pinchcd hysterctic charge-voltage propcrt ies in both periodic and non-periodic memcapacit ive systems. Even though the chargevo ltage hysteresis loops of both perio dic and non periodic metamaterial memcapacit ive systems are pinched, the hysteresis loop of t he per iodic system is relatively wider t han that of the non-periodic and on the average the rem nant polarized charge on the periodic memcapacitve system is higher than that of the non-periodic. This property of the periodic metamater ial memcapacitive system makes it a good candidate for non-volatile memory application over t he non-periodic one.en_US
dc.identifier.urihttp://etd.aau.edu.et/handle/12345678/31047
dc.language.isoenen_US
dc.publisherAddis Ababa Universityen_US
dc.subjectSimulation of Five Layers Solid-Stateen_US
dc.titleSimulation of Five Layers Solid-State Memory Capacitoren_US
dc.typeThesisen_US

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