Simulation of Five Layers Solid-State Memory Capacitor
dc.contributor.advisor | Bekele, Mulugeta (PhD) | |
dc.contributor.author | Kebede, Eyob | |
dc.date.accessioned | 2022-03-31T07:57:28Z | |
dc.date.accessioned | 2023-11-18T09:53:13Z | |
dc.date.available | 2022-03-31T07:57:28Z | |
dc.date.available | 2023-11-18T09:53:13Z | |
dc.date.issued | 2010-07 | |
dc.description.abstract | Tn t his work we provided th e simulation of a five layer charge-cont rolled memory capacitor in which periodic and non-period ic metamaterials are embeddcd between the plates of a rcgul ar paralic! plate capacitor. The simulation result shows hysteretic, negative and diverging in capacitance-voltage behavior and pinchcd hysterctic charge-voltage propcrt ies in both periodic and non-periodic memcapacit ive systems. Even though the chargevo ltage hysteresis loops of both perio dic and non periodic metamaterial memcapacit ive systems are pinched, the hysteresis loop of t he per iodic system is relatively wider t han that of the non-periodic and on the average the rem nant polarized charge on the periodic memcapacitve system is higher than that of the non-periodic. This property of the periodic metamater ial memcapacitive system makes it a good candidate for non-volatile memory application over t he non-periodic one. | en_US |
dc.identifier.uri | http://etd.aau.edu.et/handle/12345678/31047 | |
dc.language.iso | en | en_US |
dc.publisher | Addis Ababa University | en_US |
dc.subject | Simulation of Five Layers Solid-State | en_US |
dc.title | Simulation of Five Layers Solid-State Memory Capacitor | en_US |
dc.type | Thesis | en_US |