Simulation of Five Layers Solid-State Memory Capacitor
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Date
2010-07
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Addis Ababa University
Abstract
Tn t his work we provided th e simulation of a five layer charge-cont rolled memory capacitor
in which periodic and non-period ic metamaterials are embeddcd between the plates
of a rcgul ar paralic! plate capacitor. The simulation result shows hysteretic, negative and
diverging in capacitance-voltage behavior and pinchcd hysterctic charge-voltage propcrt
ies in both periodic and non-periodic memcapacit ive systems. Even though the chargevo
ltage hysteresis loops of both perio dic and non periodic metamaterial memcapacit ive
systems are pinched, the hysteresis loop of t he per iodic system is relatively wider t han
that of the non-periodic and on the average the rem nant polarized charge on the periodic
memcapacitve system is higher than that of the non-periodic. This property of the
periodic metamater ial memcapacitive system makes it a good candidate for non-volatile
memory application over t he non-periodic one.
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Simulation of Five Layers Solid-State