Simulation of Three-Layer Solid State Memcapacitor
| dc.contributor.advisor | Bekele, Mulugeta (PhD) | |
| dc.contributor.author | Wami, Shiferaw | |
| dc.date.accessioned | 2018-07-12T13:48:06Z | |
| dc.date.accessioned | 2023-11-18T09:53:12Z | |
| dc.date.available | 2018-07-12T13:48:06Z | |
| dc.date.available | 2023-11-18T09:53:12Z | |
| dc.date.issued | 2010-06 | |
| dc.description.abstract | Memcapacitors are capacitors whose capacitance depends on the past states through which the system has evolved. The focus of this thesis is on the possible realization of a three-layer solid-state memory capacitive (memcapacitive) system. The functioning of this device is based on the slow polarization rate of a medium between plates of a regular capacitor. To achieve this goal, this work considers a three-layer structure embedded in a capacitor. The three layer structure is formed by metallic layers separated by an insulator so that non-linear electronic transport between the layers can occur. Unlike conventional capacitor, the capacitance of this device depends on the history of the system. Our calculation shows non-pinched hysteretic charge-voltage and capacitance-voltage curves, and both negative and diverging capacitance within certain ranges of the field. This property of memcapacitive system makes it a good candidate for non-volatile memory application. | en_US |
| dc.identifier.uri | http://etd.aau.edu.et/handle/12345678/8387 | |
| dc.language.iso | en | en_US |
| dc.publisher | Addis Ababa Universty | en_US |
| dc.subject | Memcapacitor | en_US |
| dc.title | Simulation of Three-Layer Solid State Memcapacitor | en_US |
| dc.type | Thesis | en_US |