Simulation of Three-Layer Solid State Memcapacitor
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Date
2010-06
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Addis Ababa Universty
Abstract
Memcapacitors are capacitors whose capacitance depends on the past states through
which the system has evolved. The focus of this thesis is on the possible realization of
a three-layer solid-state memory capacitive (memcapacitive) system. The functioning of
this device is based on the slow polarization rate of a medium between plates of a regular
capacitor. To achieve this goal, this work considers a three-layer structure embedded in a
capacitor. The three layer structure is formed by metallic layers separated by an insulator
so that non-linear electronic transport between the layers can occur. Unlike conventional
capacitor, the capacitance of this device depends on the history of the system. Our
calculation shows non-pinched hysteretic charge-voltage and capacitance-voltage curves,
and both negative and diverging capacitance within certain ranges of the field. This
property of memcapacitive system makes it a good candidate for non-volatile memory
application.
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Keywords
Memcapacitor