Surface -charge Density on the Semiconductor-insulator Interface
| dc.contributor.advisor | Bezludnyi, S. (PhD) | |
| dc.contributor.author | Kassahun, Yosief | |
| dc.date.accessioned | 2021-12-16T09:29:22Z | |
| dc.date.accessioned | 2023-11-09T11:26:52Z | |
| dc.date.available | 2021-12-16T09:29:22Z | |
| dc.date.available | 2023-11-09T11:26:52Z | |
| dc.date.issued | 1992-06 | |
| dc.description.abstract | The MOS and MNOS di odes, of which an oxidized silicon surface is an ; n tegra 1 pa rt. ; 5 i ntraduced. and a theory for its opera t i on in the absence of surface states is presented. Rea l time computer prog rammes fo r measurements and numerical ana lysis were constructed. Measurements of the MOS and MNOS st ructures were done fo r different n-type samples. of dry ox ide and pyrogenic oxide with different thickness of ox ide and nitride . In addit i on to t hi s irradiated samples by l -rays with energy 1- MeV we re measured. Oiffere nt methods of measurements of determining the density and energy di stribution of i nterface states at si li con- silicon dioxide in terfaces are described. By using the set of very se ns i tive electrical measure ments the density of interfa ce states were obtained. A comparison of the t heoret i cal capac i ta nce ve rsus voltage curves with meas ured experimenta l cu rves are shown. Computer simu lated resu lts of ca l cu l ati ons using integ ra tion and spline interpolati on are given. Obtained exper imen ta l res ul ts of ene rgy distribution of t he interfa ce state density of the order less than 10 10 states per eV cml are presented and discussed. | en_US |
| dc.identifier.uri | http://10.90.10.223:4000/handle/123456789/29337 | |
| dc.language.iso | en | en_US |
| dc.publisher | Addis Ababa | en_US |
| dc.subject | Semiconductor- InsuLator In terface | en_US |
| dc.title | Surface -charge Density on the Semiconductor-insulator Interface | en_US |
| dc.type | Thesis | en_US |