Surface -charge Density on the Semiconductor-insulator Interface
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Date
1992-06
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Addis Ababa
Abstract
The MOS and MNOS di odes, of which an oxidized silicon surface is an
; n tegra 1 pa rt. ; 5 i ntraduced. and a theory for its opera t i on in the
absence of surface states is presented. Rea l time computer prog rammes fo r
measurements and numerical ana lysis were constructed. Measurements of the
MOS and MNOS st ructures were done fo r different n-type samples. of dry
ox ide and pyrogenic oxide with different thickness of ox ide and nitride .
In addit i on to t hi s irradiated samples by l -rays with energy 1- MeV we re
measured.
Oiffere nt methods of measurements of determining the density and
energy di stribution of i nterface states at si li con- silicon dioxide in terfaces
are described. By using the set of very se ns i tive electrical measure ments
the density of interfa ce states were obtained. A comparison of the
t heoret i cal capac i ta nce ve rsus voltage curves with meas ured experimenta l
cu rves are shown. Computer simu lated resu lts of ca l cu l ati ons using integ ra tion
and spline interpolati on are given. Obtained exper imen ta l res ul ts of
ene rgy distribution of t he interfa ce state density of the order less than
10 10 states per eV cml are presented and discussed.
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Keywords
Semiconductor- InsuLator In terface