Temperature-Dependent,; Hyperfine Interaction at the 111CD Nucleus in Silicon
| dc.contributor.advisor | Tessema, Genene (PhD) | |
| dc.contributor.author | Senbeta, Teshome | |
| dc.date.accessioned | 2018-07-05T13:15:49Z | |
| dc.date.accessioned | 2023-11-09T11:24:44Z | |
| dc.date.available | 2018-07-05T13:15:49Z | |
| dc.date.available | 2023-11-09T11:24:44Z | |
| dc.date.issued | 2005-06 | |
| dc.description.abstract | Impurity atoms (indium and tellurium ) were incorporated in silicon through an implantation process. The samples were annealed to remove radiation damage. The formation of Cd-Te complex and the temperature dependence of the quadrupole interaction frequency ( QIF) were studied with help of perturbed 7 — 7 angular correlation ( PAC) technique. The observed pairing between Cd and Te was due to the interaction between acceptors and donor atoms in silicon. This explains how the presence of Te influences the lattice site of the Cd atoms. The unique quadrupole interaction frequency UQ = 444M H z was associated to this complex formation. The strong quadrupole interaction frequency, 444MHz at room temperature, decreases to 388MHz at 7U 0°C' which is associated to the state ( <C d — T e ) ~ and ( C d — T e )° respectively | en_US |
| dc.identifier.uri | http://10.90.10.223:4000/handle/123456789/6746 | |
| dc.language.iso | en | en_US |
| dc.publisher | Addis Ababa University | en_US |
| dc.subject | Temperature-Dependent | en_US |
| dc.title | Temperature-Dependent,; Hyperfine Interaction at the 111CD Nucleus in Silicon | en_US |
| dc.type | Thesis | en_US |