Temperature-Dependent,; Hyperfine Interaction at the 111CD Nucleus in Silicon
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Date
2005-06
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Addis Ababa University
Abstract
Impurity atoms (indium and tellurium ) were incorporated in silicon through an implantation
process. The samples were annealed to remove radiation damage. The formation of
Cd-Te complex and the temperature dependence of the quadrupole interaction frequency
( QIF) were studied with help of perturbed 7 — 7 angular correlation ( PAC) technique.
The observed pairing between Cd and Te was due to the interaction between acceptors
and donor atoms in silicon. This explains how the presence of Te influences the lattice site
of the Cd atoms. The unique quadrupole interaction frequency UQ = 444M H z was associated
to this complex formation. The strong quadrupole interaction frequency, 444MHz
at room temperature, decreases to 388MHz at 7U 0°C' which is associated to the state
( <C d — T e ) ~ and ( C d — T e )° respectively
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Keywords
Temperature-Dependent