Charge Transport Across Metal N-Type Semiconductor Interfaces.

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Date

2018-11-05

Authors

Tamrat, Feredelign

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Publisher

Addis Ababa University

Abstract

In this study, we considered the thermionic emission, field emission and tunneling and we derived current density as a functions of different parameters such as, temperature, barrier height, work function, bias voltage and dopant concentration for thermionic emission, field emission and tunneling enhanced electron transport across metal and N-type semiconductor interfaces. The result shows that the thermionic current density is increasing exponentially as a functions of bias voltage, the current density is also increasing as a quadratic functions of temperature and current density is increasing linearly as a functions of dopant concentration. Therefore, we carry out investigation how these factors affect the current density and we solve the current density analytically with a given parameters. The results are plotted using gnuplot.

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Keywords

Charge Transport, Across Metal N-Type, Semiconductor Interfaces

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