Charge Transport Across Metal N-Type Semiconductor Interfaces.
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Date
2018-11-05
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Addis Ababa University
Abstract
In this study, we considered the thermionic emission, field emission and tunneling and
we derived current density as a functions of different parameters such as, temperature,
barrier height, work function, bias voltage and dopant concentration for thermionic
emission, field emission and tunneling enhanced electron transport across metal and
N-type semiconductor interfaces.
The result shows that the thermionic current density is increasing exponentially as a
functions of bias voltage, the current density is also increasing as a quadratic functions
of temperature and current density is increasing linearly as a functions of dopant
concentration. Therefore, we carry out investigation how these factors affect the
current density and we solve the current density analytically with a given parameters.
The results are plotted using gnuplot.
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Keywords
Charge Transport, Across Metal N-Type, Semiconductor Interfaces