Age Plastion Polaritons and Determinatio X Dielectric Permittivity and Thickness Thin Metal (Semiconductor) Films
| dc.contributor.advisor | Letov, D.A. ( PhD) | |
| dc.contributor.author | Ahmed, Abdurahman | |
| dc.date.accessioned | 2018-06-11T12:28:58Z | |
| dc.date.accessioned | 2023-11-09T11:23:25Z | |
| dc.date.available | 2018-06-11T12:28:58Z | |
| dc.date.available | 2023-11-09T11:23:25Z | |
| dc.date.issued | 1989-06 | |
| dc.description.abstract | Su}~face pla817i\To~~'pol~n~itoriH (SP1P) whIch can be excited on dielectric/met~l (dielc(·trlc/semicouductor) interface can be used as highly sensitive non distructive probe for th" determination of tJ!e dielectric constant £ (H) = (' (,,) + iE" (w) and thickness h of a metal semiconductor) fil,n without [l preset expression for (w). The theoretical background of the method [3] is based on the solution of the HaJmell's equatioIls which provides the disperssion equatIon of SrlP at the surface of a thin metal (semiconductor) film and its interpretation in terms of attenuated total reflection (ATR) characteristics. The physical sense of t,he solution is demonstrated through the power flows and the field distributions of SPIP and other poss~ble excitations. It is sho'"" that for strong absorbing metals (semiconductors) low n"jiative SPIP caa exist at frequencies higher than the plasma frequency H • , The analysts of the approximate solution of the approximate • p sollltion of dispersion equation for thin metal (semiconductor) fillil [3] established a I,ell-defined limited frequency range of its applicability. It was found that the upper frequency limit depends upon the thickness of the film and falls dOHl1 from W / ~2 to '0.35 l~ ss h+O. ,.~ . P lL P A computer model simulating realistic ,experimental conditions of measurement ATR characteristics is discussed. The accuracy of (I(W), E"(W) and h determination is established | en_US |
| dc.identifier.uri | http://10.90.10.223:4000/handle/123456789/356 | |
| dc.language.iso | en | en_US |
| dc.publisher | Addis Ababa University | en_US |
| dc.subject | THIN H2Tt\L SEMICONDUCTOR FILMS | en_US |
| dc.title | Age Plastion Polaritons and Determinatio X Dielectric Permittivity and Thickness Thin Metal (Semiconductor) Films | en_US |
| dc.type | Thesis | en_US |
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