Age Plastion Polaritons and Determinatio X Dielectric Permittivity and Thickness Thin Metal (Semiconductor) Films
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Date
1989-06
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Addis Ababa University
Abstract
Su}~face pla817i\To~~'pol~n~itoriH (SP1P) whIch can be excited on
dielectric/met~l (dielc(·trlc/semicouductor) interface can be used as
highly sensitive non distructive probe for th" determination of tJ!e
dielectric constant £ (H) = (' (,,) + iE" (w) and thickness h of a metal
semiconductor) fil,n without [l preset expression for (w).
The theoretical background of the method [3] is based on the
solution of the HaJmell's equatioIls which provides the disperssion
equatIon of SrlP at the surface of a thin metal (semiconductor) film
and its interpretation in terms of attenuated total reflection (ATR)
characteristics. The physical sense of t,he solution is demonstrated
through the power flows and the field distributions of SPIP and other
poss~ble excitations.
It is sho'"" that for strong absorbing metals (semiconductors)
low n"jiative SPIP caa exist at frequencies higher than the plasma
frequency H • , The analysts of the approximate solution of the approximate
• p
sollltion of dispersion equation for thin metal (semiconductor) fillil [3]
established a I,ell-defined limited frequency range of its applicability.
It was found that the upper frequency limit depends upon the thickness
of the film and falls dOHl1 from W / ~2 to '0.35 l~ ss h+O.
,.~ . P lL P
A computer model simulating realistic ,experimental conditions of
measurement ATR characteristics is discussed. The accuracy of (I(W),
E"(W) and h determination is established
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Keywords
THIN H2Tt\L SEMICONDUCTOR FILMS