Electrical Conductivity and Drift Mobility in Heavily Doped n-type Silicon with MIXED SCATTERING

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dc.contributor.authorGizaw, Girma
dc.date.accessioned2018-06-26T07:57:21Z
dc.date.accessioned2023-11-09T11:23:38Z
dc.date.available2018-06-26T07:57:21Z
dc.date.available2023-11-09T11:23:38Z
dc.date.issued2003-06
dc.description.abstractIn this thesis I have calculated the electrical conductivity and drift mobility in heavily doped n-type silicon in the presence of band tail effects considering mixed scattering of ionized impurities and acoustic phonons. The results of the calculation show that the electrical conductivity can be as much as 58% lower than the value obtained by using parabolic density of states and the drift mobility in heavily doped n-type silicon on the other hand is 40% lower than the value calculated using parabolic density of statesen_US
dc.identifier.urihttp://10.90.10.223:4000/handle/123456789/3582
dc.language.isoenen_US
dc.publisherAddis Ababa Universityen_US
dc.subjectElectrical Conductivity and Drift Mobilityen_US
dc.titleElectrical Conductivity and Drift Mobility in Heavily Doped n-type Silicon with MIXED SCATTERINGen_US
dc.typeThesisen_US

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