Experimental Investigation of Electrophysical Properties of Hydrogenated Amorphous Silicon

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dc.contributor.authorYifru, Meseret
dc.date.accessioned2018-06-29T10:15:06Z
dc.date.accessioned2023-11-09T11:24:04Z
dc.date.available2018-06-29T10:15:06Z
dc.date.available2023-11-09T11:24:04Z
dc.date.issued1991-06
dc.description.abstractThe I-V characteristics, the dc conductivity o(T), and the frequency dependent conductance G(w) and capacitance C(w) of hydrogenated amorFhous silicon thin films, prepared by the HOMO CVD method, are reported. A temperature and applied voltage range dependent nonlinear I-V characteristics ~las obtained for films withspdium substrate. The temperature dependent dc conductivity was found to obey the band conduction model for the 296-4l7K temperature range. The frequency dependent conductance G(w) exhibited a nonlinear frequency dependence. G(w) showed a large temperature dependence and its frequency exponent S found to decrease with increasing temperature. The ac results, being analyzed with reference to five models of ac conductivity in amorphous semiconductors, agreed ~lith the correlated barrier hopping model for the lOKHZ-UIHZ frequency rangeen_US
dc.identifier.urihttp://10.90.10.223:4000/handle/123456789/4982
dc.language.isoenen_US
dc.publisherAddis Ababa Universityen_US
dc.subjectProperties Of Hydrogenated Amorphous Siliconen_US
dc.titleExperimental Investigation of Electrophysical Properties of Hydrogenated Amorphous Siliconen_US
dc.typeThesisen_US

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