Experimental Investigation of Electrophysical Properties of Hydrogenated Amorphous Silicon
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Date
1991-06
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Addis Ababa University
Abstract
The I-V characteristics, the dc conductivity o(T), and the
frequency dependent conductance G(w) and capacitance C(w) of
hydrogenated amorFhous silicon thin films, prepared by the
HOMO CVD method, are reported. A temperature and applied voltage
range dependent nonlinear I-V characteristics ~las obtained
for films withspdium substrate. The temperature dependent
dc conductivity was found to obey the band conduction model
for the 296-4l7K temperature range. The frequency dependent
conductance G(w) exhibited a nonlinear frequency dependence.
G(w) showed a large temperature dependence and its frequency
exponent S found to decrease with increasing temperature. The
ac results, being analyzed with reference to five models of ac
conductivity in amorphous semiconductors, agreed ~lith the
correlated barrier hopping model for the lOKHZ-UIHZ frequency
range
Description
Keywords
Properties Of Hydrogenated Amorphous Silicon