A model for thermoluminescence from Silicon nanostructures
| dc.contributor.advisor | Ghoshal, Sib Krishna (PhD) | |
| dc.contributor.author | Gemechu, Nebiyu | |
| dc.date.accessioned | 2018-07-02T08:15:57Z | |
| dc.date.accessioned | 2023-11-09T11:24:14Z | |
| dc.date.available | 2018-07-02T08:15:57Z | |
| dc.date.available | 2023-11-09T11:24:14Z | |
| dc.date.issued | 2009-06 | |
| dc.description.abstract | Light emission from silicon nanocrystallites has received considerable attention in recent years due to its application in field emission and display devices. Most of the bulk materials start showing fascinating behaviors as their size is reduced to nano level.The ability to emit light as a consequence of absorption of energy (luminescence) is one of these behaviors.There are different types of luminescence observed from nanosilicon. One of the different kinds of luminescence is thermoluminescence, which is the emission of light from an insulator or semiconductor when it is heated, that is it is the thermally stimulated emission of light following the previous absorption of energy from radiation. So, there is a direct relationship between temperature and the thermoluminescence intensity. Therefore, in this work, we specifically derive the mathematical expression for the thermoluminescence intensity from silicon quantum dots as function of temperature and size of the dot using two proposed models. We also calculate the activation energy as a function of temperature and size of the dot using our model calculation for activation energy. Some of our results are quite new and requires future studies | en_US |
| dc.identifier.uri | http://10.90.10.223:4000/handle/123456789/5309 | |
| dc.language.iso | en | en_US |
| dc.publisher | Addis Ababa University | en_US |
| dc.subject | A model for thermoluminescence | en_US |
| dc.title | A model for thermoluminescence from Silicon nanostructures | en_US |
| dc.type | Thesis | en_US |