A model for thermoluminescence from Silicon nanostructures
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Date
2009-06
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Addis Ababa University
Abstract
Light emission from silicon nanocrystallites has received considerable attention in
recent years due to its application in field emission and display devices. Most of
the bulk materials start showing fascinating behaviors as their size is reduced to nano
level.The ability to emit light as a consequence of absorption of energy (luminescence)
is one of these behaviors.There are different types of luminescence observed from
nanosilicon. One of the different kinds of luminescence is thermoluminescence, which
is the emission of light from an insulator or semiconductor when it is heated, that
is it is the thermally stimulated emission of light following the previous absorption
of energy from radiation. So, there is a direct relationship between temperature and
the thermoluminescence intensity. Therefore, in this work, we specifically derive the
mathematical expression for the thermoluminescence intensity from silicon quantum
dots as function of temperature and size of the dot using two proposed models. We
also calculate the activation energy as a function of temperature and size of the dot
using our model calculation for activation energy. Some of our results are quite new
and requires future studies
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A model for thermoluminescence