Electrical Properties of Junctions Between a Aluminum and Poly[3-(2'-ButyloxY-5'-(1'''- OXOOCTYL)Phenyl)Thiophene]
| dc.contributor.advisor | Workalemahu, Bantikassegn (PhD) | |
| dc.contributor.author | Yehulie, Mandefro | |
| dc.date.accessioned | 2018-06-28T08:42:29Z | |
| dc.date.accessioned | 2023-11-09T11:23:53Z | |
| dc.date.available | 2018-06-28T08:42:29Z | |
| dc.date.available | 2023-11-09T11:23:53Z | |
| dc.date.issued | 2003-06 | |
| dc.description.abstract | The electrical properties of junctions between a low work function metal (Al) and poly[3-(2’- butyloxy-5’-(1’’’-oxooctyl)phenyl)thiophene] in the form of Al/polymer/ITO sandwich structures have been investigated by means of complex impedance spectroscopy, currentvoltage (I-V), and capacitance-voltage (C-V) characteristics. The current–voltage curve is non-ohmic and reveals Schottky barrier type of rectification. The C-V data together with I-V characteristics confirms the polymer is a p-type semiconducting polymer. The complex impedance spectroscopy shows the absence of an insulating interfacial resistive layer. Schottky device parameters have been calculated from I-V curve by applying the thermionic emission equation. As result, saturation current density ( ) 2 13 0 2.2 10 cm J A − = × , ideality factor (n) = 3.5, rectification ratio = 1761, built-in voltage = 0.96V, potential barrier = 1.11eV, dopant density 17 3 ( ) 4.83 10 − N = × cm a , and depletion width at zero bias voltage = 25.7nm have been deduced from our experimental data | en_US |
| dc.identifier.uri | http://10.90.10.223:4000/handle/123456789/4567 | |
| dc.language.iso | en | en_US |
| dc.publisher | Addis Ababa University | en_US |
| dc.subject | Between a Aluminum and Poly | en_US |
| dc.title | Electrical Properties of Junctions Between a Aluminum and Poly[3-(2'-ButyloxY-5'-(1'''- OXOOCTYL)Phenyl)Thiophene] | en_US |
| dc.type | Thesis | en_US |