Electrical Properties of Junctions Between a Aluminum and Poly[3-(2'-ButyloxY-5'-(1'''- OXOOCTYL)Phenyl)Thiophene]

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2003-06

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Addis Ababa University

Abstract

The electrical properties of junctions between a low work function metal (Al) and poly[3-(2’- butyloxy-5’-(1’’’-oxooctyl)phenyl)thiophene] in the form of Al/polymer/ITO sandwich structures have been investigated by means of complex impedance spectroscopy, currentvoltage (I-V), and capacitance-voltage (C-V) characteristics. The current–voltage curve is non-ohmic and reveals Schottky barrier type of rectification. The C-V data together with I-V characteristics confirms the polymer is a p-type semiconducting polymer. The complex impedance spectroscopy shows the absence of an insulating interfacial resistive layer. Schottky device parameters have been calculated from I-V curve by applying the thermionic emission equation. As result, saturation current density ( ) 2 13 0 2.2 10 cm J A − = × , ideality factor (n) = 3.5, rectification ratio = 1761, built-in voltage = 0.96V, potential barrier = 1.11eV, dopant density 17 3 ( ) 4.83 10 − N = × cm a , and depletion width at zero bias voltage = 25.7nm have been deduced from our experimental data

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Between a Aluminum and Poly

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