Electrical Properties of Junctions Between a Aluminum and Poly[3-(2'-ButyloxY-5'-(1'''- OXOOCTYL)Phenyl)Thiophene]
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Date
2003-06
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Addis Ababa University
Abstract
The electrical properties of junctions between a low work function metal (Al) and poly[3-(2’-
butyloxy-5’-(1’’’-oxooctyl)phenyl)thiophene] in the form of Al/polymer/ITO sandwich
structures have been investigated by means of complex impedance spectroscopy, currentvoltage
(I-V), and capacitance-voltage (C-V) characteristics. The current–voltage curve is
non-ohmic and reveals Schottky barrier type of rectification. The C-V data together with I-V
characteristics confirms the polymer is a p-type semiconducting polymer. The complex
impedance spectroscopy shows the absence of an insulating interfacial resistive layer.
Schottky device parameters have been calculated from I-V curve by applying the thermionic
emission equation. As result, saturation current density ( ) 2
13
0 2.2 10
cm
J A − = × , ideality
factor (n) = 3.5, rectification ratio = 1761, built-in voltage = 0.96V, potential barrier = 1.11eV,
dopant density 17 3 ( ) 4.83 10 − N = × cm a , and depletion width at zero bias voltage = 25.7nm
have been deduced from our experimental data
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Keywords
Between a Aluminum and Poly