Metal Semiconductor Schottky Barrier
| dc.contributor.author | Tibebu, Solomon | |
| dc.date.accessioned | 2018-07-03T12:40:26Z | |
| dc.date.accessioned | 2023-11-09T11:24:21Z | |
| dc.date.available | 2018-07-03T12:40:26Z | |
| dc.date.available | 2023-11-09T11:24:21Z | |
| dc.date.issued | 1989-06 | |
| dc.description.abstract | In this f,hesis theoretical ano mq)u'imlJlltaI illvestl9iltion of metalsemiconductol' juncitol1 cow;Is'Ung of Aluminium dep()3ited on monocyrstalline silicon are discdbed. The films of Alluminium howe bacm depositeci on P-type silicon, in the '<100> and <111> ot'lentation and resistivities of 7-13 and 100 ohm-cm, by vacuum depositon. The silicon wafters have been h'eated chemically. The experlemtnal procedures followed in the work are; the I-V vharacterlstics. forward blase and C-V characteristics for different frequencies of superimposed signal 10kHz, 20 kHz, 40 kZ, 100 kZ and 100 kHz. Measurement have been made using hp Model 4275A multi frequency meter and 4041 B pA meter IDc voltage source for C-V and I-V characteristics respectively. Low frequency C-V measurement (Quasistatic capacitance-voltage) have been tried using hp 4041 B pA meter" but inconsistency of the result (maybn lack of appropriate test fixture) We have developed all the softwat"e programmes used for the present work. the barrl<lr height obtained by various techniques were as follows. the hole barrier was obtain(ld as Bh '" 0.57 eV for chemically cleaned and oxdize for H hr. from I-V characteristics and Bh = O.53eV from C-V characterstics. The activl'! doping ocncentratlon obtained form I/CLV slope shows to decrease , as frequency increases. AI!iO th2 b;:rd;:;:" !1~ight obtained from this measurement shows frequency dependence. The range of the barrier height obtained Is (0.49 eV - 0.65 eV). The above result sugges.t that we can make 'good diodes from vacuum deposition of aluminium on P-type silicon and possible application to hybrid circuit | en_US |
| dc.identifier.uri | http://10.90.10.223:4000/handle/123456789/5992 | |
| dc.language.iso | en | en_US |
| dc.publisher | Addis Ababa University | en_US |
| dc.subject | Metal Semiconductor | en_US |
| dc.title | Metal Semiconductor Schottky Barrier | en_US |
| dc.type | Thesis | en_US |