Electronic Properties of Junctions between Aluminum and Poly(3-(2,5-dioctylphenyl) Thiophene) (PDOPT) thin films.
| dc.contributor.advisor | Workalemahu, Bantikassegn (PhD) | |
| dc.contributor.author | Tizazu, Getachew | |
| dc.date.accessioned | 2018-06-26T06:12:31Z | |
| dc.date.accessioned | 2023-11-09T11:23:34Z | |
| dc.date.available | 2018-06-26T06:12:31Z | |
| dc.date.available | 2023-11-09T11:23:34Z | |
| dc.date.issued | 2001-06 | |
| dc.description.abstract | This thesis is based on the study of the electrical properties of the Sckottky barriers formed between aluminum and spin-coated films of PDOPT in the form of AI/PDOPT/PEDOT-PSS/ITO and AIIPDOPT/ITO sandwich structures, respectively. From the I-V characteristic, the rectification ratio, diode quality factor and barrier height have been obtained for both AIIPDOPT/PEDOT-PSS/ITO and for AIIPDOPT/ITO structures. The Cole-Cole plot of the complex impedance spectra for AI/PDOPT/ITO exhibits part of a single bias voltage-dependant semicircle, which is a characteristic of most metal semiconductor junctions. The complex impedance spectra of AI/PDOPT/ PEDOTPSS/ ITO device showed two partially overlapping semicircles at reveres bias voltages which revealed the existence of thin insulating interfacial layer at metal/polymer junction | en_US |
| dc.identifier.uri | http://10.90.10.223:4000/handle/123456789/3410 | |
| dc.language.iso | en | en_US |
| dc.publisher | Addis Ababa University | en_US |
| dc.subject | Electronic Properties of Junctions between Aluminum | en_US |
| dc.title | Electronic Properties of Junctions between Aluminum and Poly(3-(2,5-dioctylphenyl) Thiophene) (PDOPT) thin films. | en_US |
| dc.type | Thesis | en_US |