Photoluminescence Mechanism in Silicon Nanostructure
| dc.contributor.author | Assefa, Gezahegn | |
| dc.date.accessioned | 2018-06-26T07:17:08Z | |
| dc.date.accessioned | 2023-11-09T11:23:35Z | |
| dc.date.available | 2018-06-26T07:17:08Z | |
| dc.date.available | 2023-11-09T11:23:35Z | |
| dc.date.issued | 2007-03 | |
| dc.description.abstract | The optical properties of bulk Silicon are deeply modi ed if the material is manipulated at the nano metric size. In particular the growth of nanocrystalline Silicon(nc-Si) structures constitutes today a promissing approach for the develop- ment of Silicon based light emitting devices. In this thesis the in uence of quantum con nement on the optical properties of nc-Si is investigated.We basically concen- trate on the Photoluminescence (PL) of nc-Si. One of the fundamental parameters describing The PL mechanism of nc-Si is the radiative recombination rate. In order to examine the mechanism of the PL from the nc-Si the optical transition and the radiative transition rate are studied based on the quantum con nement(QC)model. We nd that the radiative recombination rate varies as . Where d3 is the diame- ter of the spherical crystallites. This result shows that the radiative recombination rate increases with decreasing the size of the nc-Si. As a result, the PL emission intensity enhanced due to QCE and the PL can be tuned into the visible range | en_US |
| dc.identifier.uri | http://10.90.10.223:4000/handle/123456789/3509 | |
| dc.language.iso | en | en_US |
| dc.publisher | Addis Ababa University | en_US |
| dc.subject | Photoluminescence Mechanism | en_US |
| dc.title | Photoluminescence Mechanism in Silicon Nanostructure | en_US |
| dc.type | Thesis | en_US |