Photoluminescence Mechanism in Silicon Nanostructure
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Date
2007-03
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Addis Ababa University
Abstract
The optical properties of bulk Silicon are deeply modi ed if the material is
manipulated at the nano metric size. In particular the growth of nanocrystalline
Silicon(nc-Si) structures constitutes today a promissing approach for the develop-
ment of Silicon based light emitting devices. In this thesis the in uence of quantum
con nement on the optical properties of nc-Si is investigated.We basically concen-
trate on the Photoluminescence (PL) of nc-Si. One of the fundamental parameters
describing The PL mechanism of nc-Si is the radiative recombination rate. In order
to examine the mechanism of the PL from the nc-Si the optical transition and the
radiative transition rate are studied based on the quantum con nement(QC)model.
We nd that the radiative recombination rate varies as . Where d3 is the diame-
ter of the spherical crystallites. This result shows that the radiative recombination
rate increases with decreasing the size of the nc-Si. As a result, the PL emission
intensity enhanced due to QCE and the PL can be tuned into the visible range
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Keywords
Photoluminescence Mechanism