Temperature and Dopant Density Dependence of Electron Conductivity in N-Type Silicon

dc.contributor.advisorElfagd, Yitagessu (PhD)
dc.contributor.authorJemera, Yohanis
dc.date.accessioned2019-11-19T12:18:51Z
dc.date.accessioned2023-11-09T11:26:00Z
dc.date.available2019-11-19T12:18:51Z
dc.date.available2023-11-09T11:26:00Z
dc.date.issued2019-04-04
dc.description.abstractThe electrical conductivity of n-type silicon depends on the doping concentration and tem- perature where ionized impurity scattering and acoustical phonon scattering are the dominant scattering mechanisms. In this work, it is seen that the electrical conductivity of n-type sili- con increases as the electron concentration increases e.i., when there are more ionized impurity there are more scattering from straight line path, so this reduces mobility. The expressions for computing conductivity as a function of dopant density and temperature has been formulated for n-type silicon. The electrical conductivity of n-type silicon was calculated numerically by appropriately combining ionized impurity and acoustical phonon scattering and the result we got are in agreement with those in the literature. The calculation cover at various ranges of dopant densities and temperatures. As the data of numerical computation show, as temperature increases both mobility and conductivity increase where as relaxation time decreases. More- over, as the dopant density increases, both relaxation time and conductivity increase where as mobility decreases.en_US
dc.identifier.urihttp://10.90.10.223:4000/handle/123456789/20146
dc.language.isoenen_US
dc.publisherAddis Ababa Universityen_US
dc.subjectTemperatureen_US
dc.subjectDopant Densityen_US
dc.subjectDependenceen_US
dc.subjectElectron Conductivityen_US
dc.subjectN-Type Siliconen_US
dc.titleTemperature and Dopant Density Dependence of Electron Conductivity in N-Type Siliconen_US
dc.typeThesisen_US

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