Temperature and Dopant Density Dependence of Electron Conductivity in N-Type Silicon
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Date
2019-04-04
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Addis Ababa University
Abstract
The electrical conductivity of n-type silicon depends on the doping concentration and tem-
perature where ionized impurity scattering and acoustical phonon scattering are the dominant
scattering mechanisms. In this work, it is seen that the electrical conductivity of n-type sili-
con increases as the electron concentration increases e.i., when there are more ionized impurity
there are more scattering from straight line path, so this reduces mobility. The expressions for
computing conductivity as a function of dopant density and temperature has been formulated
for n-type silicon. The electrical conductivity of n-type silicon was calculated numerically by
appropriately combining ionized impurity and acoustical phonon scattering and the result we
got are in agreement with those in the literature. The calculation cover at various ranges of
dopant densities and temperatures. As the data of numerical computation show, as temperature
increases both mobility and conductivity increase where as relaxation time decreases. More-
over, as the dopant density increases, both relaxation time and conductivity increase where as
mobility decreases.
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Keywords
Temperature, Dopant Density, Dependence, Electron Conductivity, N-Type Silicon