Thermodynamics of the Metal Vacancy IN 1111n Doped ZnSe
| dc.contributor.advisor | Wichert, Thomas (PhD) | |
| dc.contributor.author | Tsige, Mesfin | |
| dc.date.accessioned | 2018-06-29T11:38:35Z | |
| dc.date.accessioned | 2023-11-09T11:24:06Z | |
| dc.date.available | 2018-06-29T11:38:35Z | |
| dc.date.available | 2023-11-09T11:24:06Z | |
| dc.date.issued | 1994-03 | |
| dc.description.abstract | Large scale application of the II- VI compound ZnSe has been hampered by the low conductivity of p-type ZnSe. Very recently, well-conducting p-type ZnSesamples' Jlave been produced, but it is still not known wlty acceptor doping of ZnSe is so difficult. Nonetlteless, intrinsic point defects and impurities are blamed for tltis problellt In the ZnSe semiconductor doped witlt In, the formation of Inzn - Vzn comple.-.:es is shown to o~cur .u sing. tlte radioactive dopant 1lJ In along witlt tlte perturbed rr angular correlation technique wlticlt seem to be responsible for tlte self-compensation of In donors in ZnSe. Tlte. formati.o n and dissociation of these comple.-.:es were observed following a rapid quench of the material during annealing between 300 and 700 Kin vacuullt In light of tltis tltermal stability , of tlte complex, the migration energy of the metal vacancy defect Vzn and its binding energy with the donor In is determined to be 1.30 ± 0.05 eV and 0.34 ± 0.03 e V rj!spectively | en_US |
| dc.identifier.uri | http://10.90.10.223:4000/handle/123456789/5026 | |
| dc.language.iso | en | en_US |
| dc.publisher | Addis Ababa University | en_US |
| dc.subject | Thermodynamics of the Metal Vacancy | en_US |
| dc.title | Thermodynamics of the Metal Vacancy IN 1111n Doped ZnSe | en_US |
| dc.type | Thesis | en_US |