Thermodynamics of the Metal Vacancy IN 1111n Doped ZnSe
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Date
1994-03
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Addis Ababa University
Abstract
Large scale application of the II- VI compound ZnSe has been hampered
by the low conductivity of p-type ZnSe. Very recently, well-conducting p-type
ZnSesamples' Jlave been produced, but it is still not known wlty acceptor doping
of ZnSe is so difficult. Nonetlteless, intrinsic point defects and impurities are
blamed for tltis problellt
In the ZnSe semiconductor doped witlt In, the formation of Inzn - Vzn
comple.-.:es is shown to o~cur .u sing. tlte radioactive dopant 1lJ In along witlt tlte
perturbed rr angular correlation technique wlticlt seem to be responsible for tlte
self-compensation of In donors in ZnSe. Tlte. formati.o n and dissociation of
these comple.-.:es were observed following a rapid quench of the material during
annealing between 300 and 700 Kin vacuullt In light of tltis tltermal stability
,
of tlte complex, the migration energy of the metal vacancy defect Vzn and its
binding energy with the donor In is determined to be 1.30 ± 0.05 eV and 0.34 ±
0.03 e V rj!spectively
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Keywords
Thermodynamics of the Metal Vacancy