Review of Spin Dependent Hall Effect
| dc.contributor.advisor | Senbeta, Teshome (PhD) | |
| dc.contributor.author | Defar, Addis | |
| dc.date.accessioned | 2019-08-02T07:36:27Z | |
| dc.date.accessioned | 2023-11-09T11:25:38Z | |
| dc.date.available | 2019-08-02T07:36:27Z | |
| dc.date.available | 2023-11-09T11:25:38Z | |
| dc.date.issued | 2018-10-04 | |
| dc.description.abstract | Hall effects, in general, are transport phenomena, in which an applied field on the particles results in a motion perpendicular to the field. In traditional Hall effect and its quantum versions charges are transported by the action of a Lorentz force. The spin Hall effect(SHE) and its quantum versions are a relativistic spin orbit coupling phenomenon allow to create and manipulate the spin, and generate a spin current. It is of particular importance to the development of transistor like devices. The spin orbit interaction responsible for the SHE is also expected to cause the inverse process of the SHE. The inverse spin Hall effect (ISHE) is a process that converts a spin current into an electric current. The quantum spin Hall effect allows for the existence of an unusual type of material called a topological insulator without external magnetic field which conducts electricity on the surface but not through the bulk of the material and my finding shows the plot of resistivity versus quantized magnetic field is plateau. | en_US |
| dc.identifier.uri | http://10.90.10.223:4000/handle/123456789/18722 | |
| dc.language.iso | en | en_US |
| dc.publisher | Addis Ababa University | en_US |
| dc.subject | Spin Dependent | en_US |
| dc.subject | Hall Effect | en_US |
| dc.subject | Motivation | en_US |
| dc.subject | Electric Field | en_US |
| dc.title | Review of Spin Dependent Hall Effect | en_US |
| dc.type | Thesis | en_US |