Photoluminescence of Indium Gallium Arsenide Quantum Dots and Dot Chains

dc.contributor.advisorColton, John S. (PhD)
dc.contributor.authorMitchell, Aaron
dc.date.accessioned2021-02-11T12:44:36Z
dc.date.accessioned2023-11-09T11:26:28Z
dc.date.available2021-02-11T12:44:36Z
dc.date.available2023-11-09T11:26:28Z
dc.date.issued2010-04-04
dc.description.abstractNanostructures such as quantum dots (QDs) and QD chains have received signi cant attention because of their applications in quantum information technologies. This paper presents optical investigations of InGaAs QDs and dot chains. The InGaAs samples were grown on a (001) GaAs substrate by Dr. Haeyeon Yang using a novel method similar to the Stranski-Krastonov growth method. Intensity and temperature dependence of the sample photoluminescence (PL) spectra were obtained through optical excitation and detection. The presence of a PL peak at 1 m suggests the successful creation of QD chains. Also outlined is the method for calculating the PL curve-correcting functions to account for grating e ciencies and a changing reciprocal linear dispersion in monochromators.en_US
dc.identifier.urihttp://10.90.10.223:4000/handle/123456789/25076
dc.language.isoenen_US
dc.publisherAddis Ababa Universityen_US
dc.subjectPhotoluminescenceen_US
dc.subjectIndium Galliumen_US
dc.subjectArsenide Quantumen_US
dc.subjectDotsen_US
dc.subjectDot Chainsen_US
dc.titlePhotoluminescence of Indium Gallium Arsenide Quantum Dots and Dot Chainsen_US
dc.typeThesisen_US

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