Photoluminescence of Indium Gallium Arsenide Quantum Dots and Dot Chains
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Date
2010-04-04
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Addis Ababa University
Abstract
Nanostructures such as quantum dots (QDs) and QD chains have received signi
cant attention because of their applications in quantum information technologies.
This paper presents optical investigations of InGaAs QDs and dot
chains. The InGaAs samples were grown on a (001) GaAs substrate by Dr.
Haeyeon Yang using a novel method similar to the Stranski-Krastonov growth
method. Intensity and temperature dependence of the sample photoluminescence
(PL) spectra were obtained through optical excitation and detection.
The presence of a PL peak at 1 m suggests the successful creation of QD
chains. Also outlined is the method for calculating the PL curve-correcting
functions to account for grating e ciencies and a changing reciprocal linear
dispersion in monochromators.
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Keywords
Photoluminescence, Indium Gallium, Arsenide Quantum, Dots, Dot Chains