Mechanisms for Formations of Photoluminescience from Silicon and Germanium Nanostructures and Formulating Models
| dc.contributor.advisor | Bedassa, Tesgera (PhD) | |
| dc.contributor.author | Hailemariam, Solomon | |
| dc.date.accessioned | 2018-07-03T11:50:34Z | |
| dc.date.accessioned | 2023-11-09T11:24:18Z | |
| dc.date.available | 2018-07-03T11:50:34Z | |
| dc.date.available | 2023-11-09T11:24:18Z | |
| dc.date.issued | 2011-06 | |
| dc.description.abstract | Bulk silicon (Si) and germanium (Ge) have an indirect band gap transitions however when they are miniaturized to nanometer scale, the energy gap between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) increases, and hence the transition changes to direct due to confinement. The HOMO-LUMO gap determines the excitation of electrons so that the nanostructures will emit light. In this work,quantum confinement effects for Si and Ge,some methods to calculate band structures and formation mechanisms of photoluminescence from Si and Ge nanostructures are presented. We presented the parameters that influence the photoluminescence intensity of Si and Ge nanostructures. Finally we developed a model that could explain experimental results of Si nanocrystal photoluminescence versus size and wavelength by using Matlab program | en_US |
| dc.identifier.uri | http://10.90.10.223:4000/handle/123456789/5937 | |
| dc.language.iso | en | en_US |
| dc.publisher | Addis Ababa University | en_US |
| dc.subject | Mechanisms for Formations of Photoluminescience | en_US |
| dc.title | Mechanisms for Formations of Photoluminescience from Silicon and Germanium Nanostructures and Formulating Models | en_US |
| dc.type | Thesis | en_US |