Mechanisms for Formations of Photoluminescience from Silicon and Germanium Nanostructures and Formulating Models
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Date
2011-06
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Addis Ababa University
Abstract
Bulk silicon (Si) and germanium (Ge) have an indirect band gap transitions however when they are
miniaturized to nanometer scale, the energy gap between the highest occupied molecular orbital
(HOMO) and the lowest unoccupied molecular orbital (LUMO) increases, and hence the transition
changes to direct due to confinement. The HOMO-LUMO gap determines the excitation of electrons
so that the nanostructures will emit light. In this work,quantum confinement effects for Si and
Ge,some methods to calculate band structures and formation mechanisms of photoluminescence
from Si and Ge nanostructures are presented. We presented the parameters that influence the
photoluminescence intensity of Si and Ge nanostructures. Finally we developed a model that could
explain experimental results of Si nanocrystal photoluminescence versus size and wavelength by
using Matlab program
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Mechanisms for Formations of Photoluminescience