Optical and Electrical Properties of A-Si:H Multilayer Solar Cells
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Date
1988-06
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Addis Ababa University
Abstract
llie transmittance spectra of a·Si :l-i pin solar cell samples having different i-layer thickness
were measured with a Perkins Elmer Lambda 19 spectrometer. The spectra were simulated
with the SCOUTFIT computer program by making use of the Forouhi and Bloomer dielectric
fu nction model to dctennine the values of the optica l parameters (energy gap, refractive index
and laye r thickn ess) of the different layer systems (glass, TeO, po, i- and n-layers) of the
a- Si:H so lar cell samples. l1le fi tt ed valu es of the opt ica l parameters arc found to be ill good
agreement with published valu es.
l 1JC I-V characteristics curves of a-Si: H solar cells were measured. 11le pa ra meters J",> V 0< ' 11
and FF for the different samples, when the samples were illuminated \' .... I[h lighi of diffe rent
in tensities are determined and compared wi lh published result s. The paper presents the
exp erimental results obtained from the tra nsmittance spectra and the 1-V characteristics
measurements of the solar cell samples
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Keywords
A-Si:H Multilayer Solar Cells