Repository logo
  • English
  • Català
  • Čeština
  • Deutsch
  • Español
  • Français
  • Gàidhlig
  • Italiano
  • Latviešu
  • Magyar
  • Nederlands
  • Polski
  • Português
  • Português do Brasil
  • Srpski (lat)
  • Suomi
  • Svenska
  • Türkçe
  • Tiếng Việt
  • Қазақ
  • বাংলা
  • हिंदी
  • Ελληνικά
  • Српски
  • Yкраї́нська
  • Log In
    New user? Click here to register. Have you forgotten your password?
Repository logo
  • Colleges, Institutes & Collections
  • Browse AAU-ETD
  • English
  • Català
  • Čeština
  • Deutsch
  • Español
  • Français
  • Gàidhlig
  • Italiano
  • Latviešu
  • Magyar
  • Nederlands
  • Polski
  • Português
  • Português do Brasil
  • Srpski (lat)
  • Suomi
  • Svenska
  • Türkçe
  • Tiếng Việt
  • Қазақ
  • বাংলা
  • हिंदी
  • Ελληνικά
  • Српски
  • Yкраї́нська
  • Log In
    New user? Click here to register. Have you forgotten your password?
  1. Home
  2. Browse by Author

Browsing by Author "Yehulie, Mandefro"

Now showing 1 - 1 of 1
Results Per Page
Sort Options
  • No Thumbnail Available
    Item
    Electrical Properties of Junctions Between a Aluminum and Poly[3-(2'-ButyloxY-5'-(1'''- OXOOCTYL)Phenyl)Thiophene]
    (Addis Ababa University, 2003-06) Yehulie, Mandefro; Workalemahu, Bantikassegn (PhD)
    The electrical properties of junctions between a low work function metal (Al) and poly[3-(2’- butyloxy-5’-(1’’’-oxooctyl)phenyl)thiophene] in the form of Al/polymer/ITO sandwich structures have been investigated by means of complex impedance spectroscopy, currentvoltage (I-V), and capacitance-voltage (C-V) characteristics. The current–voltage curve is non-ohmic and reveals Schottky barrier type of rectification. The C-V data together with I-V characteristics confirms the polymer is a p-type semiconducting polymer. The complex impedance spectroscopy shows the absence of an insulating interfacial resistive layer. Schottky device parameters have been calculated from I-V curve by applying the thermionic emission equation. As result, saturation current density ( ) 2 13 0 2.2 10 cm J A − = × , ideality factor (n) = 3.5, rectification ratio = 1761, built-in voltage = 0.96V, potential barrier = 1.11eV, dopant density 17 3 ( ) 4.83 10 − N = × cm a , and depletion width at zero bias voltage = 25.7nm have been deduced from our experimental data

Home |Privacy policy |End User Agreement |Send Feedback |Library Website

Addis Ababa University © 2023