Browsing by Author "Tibebu, Solomon"

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    Metal Semiconductor Schottky Barrier
    (Addis Ababa University, 1989-06) Tibebu, Solomon
    In this f,hesis theoretical ano mq)u'imlJlltaI illvestl9iltion of metalsemiconductol' juncitol1 cow;Is'Ung of Aluminium dep()3ited on monocyrstalline silicon are discdbed. The films of Alluminium howe bacm depositeci on P-type silicon, in the '<100> and <111> ot'lentation and resistivities of 7-13 and 100 ohm-cm, by vacuum depositon. The silicon wafters have been h'eated chemically. The experlemtnal procedures followed in the work are; the I-V vharacterlstics. forward blase and C-V characteristics for different frequencies of superimposed signal 10kHz, 20 kHz, 40 kZ, 100 kZ and 100 kHz. Measurement have been made using hp Model 4275A multi frequency meter and 4041 B pA meter IDc voltage source for C-V and I-V characteristics respectively. Low frequency C-V measurement (Quasistatic capacitance-voltage) have been tried using hp 4041 B pA meter" but inconsistency of the result (maybn lack of appropriate test fixture) We have developed all the softwat"e programmes used for the present work. the barrl