Effects of Electric Field on a Charge Carrier Mobility in Disordered Organic Semiconductors for Different Localization Length (Monte Carlo Simulation)

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2020-09-09

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Addis Ababa University

Abstract

Organic semiconductors (OSCs) have attracted increasing interest since they have proven to be a potential use as active material in electronic devices such as organic light emitting diodes (OLEDs) and organic field effect transistors (OFETs). They are composed of molecules which are held together by Van-der Waals forces which are weak compared to covalent bonds and because of this OSCs are flexible and fabricated easily at low temperature. Van-derWaals bonding has an effect of forming narrow electronic bandwidths and weak intermolecular interactions which in turn lead to special and energetic disorder, and also localization of charge carriers. Thus, the charge carrier mobility in organic semiconductors is generally much smaller than that in covalently bonded crystalline inorganic semiconductors. Besides this one of the problems for the practical applications of organic semiconductor is lack of an understanding of charge carrier transport properties. In this thesis, we investigate the charge carrier transport behavior of numerical code we developed using Kinetic Monte Carlo (KMC) simulation technique on the basis of Miller and Abrahams rate equation. Particularly we will show the mobility of charge carrier as function of electric field taking into consideration the effects of temperature, disorder parameter (known as Gaussian width), localization length and charge carrier density. In our simulation, the results will compare by variation of localization length, charge carrier density and Gaussian width.

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Effects of Electric Field, Charge Carrier Mobility, Disordered Organic Semiconductors, Different Localization Length

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