Expermental Studies Of Injection Electroluhinescence In P-n Junctions

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Date

1987-06

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Addis Ababa University

Abstract

r·:xp~·cfment;}.1 ntudy of opttc:nl and electrical propert:t<~n of Blx different groups of: ['lec.tJ:ulUin.i.ll.e~~Cl'fd:_ dl()d(~8 (LEDr.,) \.1<1£ (:;nried ottt.. at and near roonl temperatures. The first category of the diodes consisted of four groups of red (LQ 1131), orange (experimental samples «ithout catalogue number) yello" I (LQ 1.431) and green I (LQ 1731) colored LEOs fabricatd by TESLA ElectronIcs, in Czechoslovakia. E(1ch of theee groups consisted of seven samples. In the second category, tllcre were two groups of yelloH II (LEIl4 566-1,81) 8ml green II (L1l1J4 586-491) colored LEDs each with three Romples. These sBcond category LEDs Here fabricated by Radio Spares (RS) of England. Comparative studies of I-V, C-V. lphoto -V, emission spectra and band gap «ere carried out for all these diodes. The I-V characteristics revealed that the ideality factoJ: 'n' In I."""qV/nKT ranges from 1.3 (for orange) to 1.7 (for red) in the first four groups. For yellow II & green II this parameter has values of 1.B & 1.9,respectively. These values of n remained constant in the exponential region "hich extended over about tHO decades of the voltage for most of the diodes. C-·V resuLt indicated that all the diodes have abrupt junctions Idtll built-in potentials of 2.89, 1.63, 2.04, 2.14, 1.92 f,. 2.06 eV for red, orange, yelloH I, yellow II, green I & green II, respectively. The I photo VB V study sho«.d that lUminosity ( ...... {photo) pas an exponential voltage dependence (of the form eqV /rlKl") in the vol tage range over Hhieh the· ideality factor (n) nearly remained condtant. lengtl.s (energies) of 560 nm (2.215eV); 587 nm ~2.1L4eV); 590 nm (?.103eV); 662 nrn (1.874eV); 562 nm (2.208eV) and 5931110 (l.092eV) for green I, yello"¥Y I, orange, red, green II and yellow II, re8pecti~_ely. Speetr"l emission ,'tudy and hand gap measurements sllOHed that the LElJs are of Ga (As.P) >lIth the exceptIon of the orange LEOs, Hhich ill some eases shm.,ed deviations from the values of orange Gn (As. P) LI<:Ds. Radiative recombinations occured for the red ~ED9 at an impurity level of about 50 maV and for green at about 1.0 meV f.rom either band edges. r'or yellow LEDs the values wer" as high as 90 maV. An attempt Has made to evaluate effIciency of the light emission for the EL diodes. Light emission intensity comparison revealed red LEna as the most intense folloHed by green I, the recombination of which might have possibly been assisted by nitrogen isoelectrOtlic traps. The 'small intensity value in all tIle rest of tIle diodes might be Bttribtlted to the absence of the isoelectronic traps. No pos1 tion shU t of the peak emission energy "as observed Hith diode currents for all the EL diodes

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Expermental Studies of Injection

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