Analysis of the Effect of Presence of Magnetic Field in Photon-electron Interface
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Date
2021-11
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Addis Ababa University
Abstract
Electronics played a great role in storing, computing, and transmitting data. However, electronics had certain limitations in bandwidth, speed, power consumption, and electromagnetic interfering. Conversely, photonic provides advantages like large bandwidth, lower power consumption, and immune to electromagnetic interference. Therefore, to overcome the electronics limitations, electronics and photonics integration developed.
Despite many advantages of the integration of electronics and photonics, the presence of an external magnetic field in photon-electron interfaces influences the performances of lasers and photodiodes. Those effects are well studied when lasers and photodiodes are separately subjected to the magnetic field in previous studies. However, the difference in the magnetic field effects on the output signal when both transducers are concurrently exposed to the field needs further study. Additionally, the influence of change in input signal frequency to the magnetic field effect on output signal when laser and photodiode are separately and simultaneously exposed also needs further study.
To demonstrate the difference in magnetic field effect on the output signal when the frequency of input signal varies as well as both laser and photodiode concurrently exposed to magnetic field relative to separately subjected; experimental setup was prepared in the laboratory by connecting VCSEL and PIN photodiode with other devices. Then experiments were conducted at around room temperature. During experimentation, both transducers were individually and concurrently exposed to the static magnetic field oriented B//n and B┴n, at 3 kHz & 10 kHz. Then output voltage was measured and recorded at 0, 400, 600, 800, and 1000mT.
The results were compared based on the rate of change in output voltage at different magnetic flux densities and frequencies. The magnetic field effect on output signal was found higher at 3 kHz compared to at 10 kHz for both VCSEL and PIN photodiode individually and concurrently exposed. Additionally, the comparisons made at a fixed frequency showed that the magnetic field effect on output signal was much higher when VCSEL and PIN photodiode concurrently exposed relative to individually exposed.
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Keywords
Photon-electron interface, Semiconductor Lasers, Photodiodes, Magnetic field