Variation of the 111 _CD - P Population in Silicon with Annealing Temperature.
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Date
2007-08
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Addis Ababa University
Abstract
Studying the nature of defects in semiconductor helps to minimize the undesired
behaviors they contribute. In this study, the perturbed angular correlation method
has used to understand the formation of the substitutional %$'&)(+* pairs in silicon.
T 0/2h1e pairs are characterized by a unique quadrupole interaction frequency of ,- .
MHz, that suggest a strong interaction between acceptor and donor atoms in
an elemental semiconductor silicon. The variation of the nearest neighbor * %$'&3( population with the annealing temperature is discussed. Finally, the binding
energy and ratios of free and trapped states around the complex are determined
using the fraction of the probe atom that form the pairs at annealing temperature
intervals of 700C-100C
C-1000C
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Variation of the 111 CD - P