Review of Spin Dependent Transport

dc.contributor.advisorSenbeta, Teshome (PhD)
dc.contributor.authorGeleta, Abdisa
dc.date.accessioned2018-06-11T08:49:56Z
dc.date.accessioned2023-11-09T11:27:41Z
dc.date.available2018-06-11T08:49:56Z
dc.date.available2023-11-09T11:27:41Z
dc.date.issued2017-08
dc.description.abstractSpin based electronics, is based on the use of spin orbit coupling in convectional semi- conductors materials. We regard the prediction and discovery of intrinsic spin Hall e ect as an important step toward developing integrated spin logic devices and achiev- ing lower energy consumption. To develop and review the three potential means of dissipationless spin transport in semiconductors with and without spin-orbit coupling are the use of spin currents, propagating modes, and orbital currents. Dissipation- less spin currents occur in materials with strong spin-orbit coupling, such as GaAs, while orbital currents occur in materials with weak spin-orbit coupling, such as Si, but with degenerate bands characterized by an atomic orbital index. The potential means for achieving dissipationless spin transport constitute a theoretical and asso- ciated potential experimental directions with technological implications. A number of alternatives to the current semiconductor technology have recently been proposed, including technologies based on carbon nanotubes, molecular electronics, and dilute magnetic semiconductors. In materials without spin-orbit coupling, one of the current e orts should be to try to detect the orbital Hall e ect and to investigate whether the orbital moment can be transferred to spin and hence be used for spin injection. Moreover, experimental techniques should be devised to enhance the amount of spin polarization arising from spin currenten_US
dc.identifier.urihttp://10.90.10.223:4000/handle/123456789/307
dc.language.isoenen_US
dc.publisherAddis Ababa Universityen_US
dc.subjectSpin Dependent Transporten_US
dc.titleReview of Spin Dependent Transporten_US
dc.typeThesisen_US

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