Transport in Mesoscopic Semicondctor Structures

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dc.contributor.advisorBadassa, Tesgara (PhD)
dc.contributor.authorFeleke, Tsegaye
dc.date.accessioned2021-03-19T08:44:27Z
dc.date.accessioned2023-11-09T11:26:30Z
dc.date.available2021-03-19T08:44:27Z
dc.date.available2023-11-09T11:26:30Z
dc.date.issued2021-03-17
dc.description.abstractA review on charge transport in mesoscopic semiconductor structure was presented by considering the quantum transport theory of carrier and quasi particles in low- dimensional structures called semiconductor nanostructure devices. More specifically, the concentration, motions and optical properties of carriers in a semiconductor crystal structure are theoretically as well as statistically described based on Fermi – Dirac distribution and Boltzmann transport equation. We reviewed the free-carrier and free-quasi particle transport in semiconductor nanostructure devices based on the well-known non equilibrium Green function approach. The effects of interference on Aharonov- Bohm limit, the general properties of scattering super operators entering the effective quantum transport theory at various description level reduction procedure and diagonal or semiconductor limit were also reviewed separately.en_US
dc.identifier.urihttp://10.90.10.223:4000/handle/123456789/25608
dc.language.isoenen_US
dc.publisherAddis Ababa Universityen_US
dc.subjectTransporten_US
dc.subjectMesoscopicen_US
dc.subjectSemicondctoren_US
dc.subjectStructuresen_US
dc.titleTransport in Mesoscopic Semicondctor Structuresen_US
dc.typeThesisen_US

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