Optical Characterization of Thin Films for Solar Cell Application
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Date
1995-06
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Addis Ababa University
Abstract
Reflectance (R) and Transmittance (T) measurements can provide infonnation
about optical properties of thin ftlms. Optical characteristic of different transparent
conducting oxides (TeOs) have been studied. Optical band gap of hydrogenated
amorphous silicon and hydrogenated amorphous silicon alloys thin. films are calculated
from R & T measurements using Hishikawa's relation and the program we have written.
Thickness, optical band gap and dielectric function of a-Si:H films can be obtained at a
time from Rand T measurements using an optical simulation soft ware for layer stacks.
Near nonnal incidence R data is fitted with a model to obtain dielectric function and from
the obtained result T curve is simulated to prove whether the obtained die1ecttic function
represents the ftlm or not. This method can be extended even to non-transparent ftlms.
To characteIize non-transparent mms, however, is necessaty to perfonn R, (s -
polatized) and Rp (p - polarized) measurements for incidence angle different from near
nonnal incidence (6") angle. p-i-n solar cell has been charactetizcd by the same method
with a mode
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Keywords
Optical Characterization of ThinFilms