Electron Transport in Silicon Carbide System
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Date
2020-01-01
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Addis Ababa University
Abstract
In this work electron transport in silicon carbide (SiC) system were considered.
The calculations are done based on Density Functional Theory (DFT) which adopt
a use of the generalized gradient approximation (GGA) in PBE. An abinit code
based on the DFT is applied. From the calculations, we obtained optimum values
of lattice constant (parameters), bulk modulus, cut-o energy, and di erent energies
(surface energy, cohesive energy, vacancy energy) of silicon carbide. These
results are reported using a step-by-step approach and compared with other exprimental
values. Analysis based on bandstructure, density of state, projected
density of state, work-function, and optical properties are also presented. The optical
property has a direct relationship with the distribution of crystal bandgap
and electronic density of state. The Monte Carlo method takes into account band
structure model to investigate electron transport.
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Keywords
Electron Transport, Bandstructure, Optical Properity, Workfunction, DOS, PDOS, DFT, GGA, ABINIT, MC