Implantation of Ti into Oxides for Optical Applications
| dc.contributor.author | Thomas, Petros | |
| dc.date.accessioned | 2018-07-02T10:58:45Z | |
| dc.date.accessioned | 2023-11-09T11:23:27Z | |
| dc.date.available | 2018-07-02T10:58:45Z | |
| dc.date.available | 2023-11-09T11:23:27Z | |
| dc.date.issued | 1995-06 | |
| dc.description.abstract | Titanium (Tt2) implantation and annealing of lithium niobate (LiNbOJ) and sapphire (AI,OJ) has been investigated using RES and SIMS measurements. The implantation was done at room temperature with doses- IOI5Ti/cm2, IOHTi/cm2, 5xl01"Ti/cm2 and I017Ti/cm'. The energy of implantation was 400 ke V. After implantation the samples were annealed with oven (10600C for one hour) and rapid thermal annealer (10600C for one minute). For the A1PJ samples high temperature furnac;~ ~l!Pea(in'g '(14P.Q°(; [o:r, oQ~:ho~r) y.,~s'aho ~sed. Then, the implanted and annealed sampl~esw!'n, al1alysecl "lith. ~u!~~rf~rJ B~cks~att~ring Spectrometry using He+ ions as the an~lysing~e~I]1':,,!ith:an:ere~gl{o ~fJA.~e,j. Moreover, , . , the LiNbOJ samples were analysed with .sr.~~nd:a;Y: Io'n M~~~, S,p~c~rp~~;.y, )'i>e, paper presents the experimental results obtained from the RES and SIMS measurements | en_US |
| dc.identifier.uri | http://10.90.10.223:4000/handle/123456789/5405 | |
| dc.language.iso | en | en_US |
| dc.publisher | Addis Ababa University | en_US |
| dc.subject | Implantation of Ti into Oxides | en_US |
| dc.title | Implantation of Ti into Oxides for Optical Applications | en_US |
| dc.type | Thesis | en_US |