Temperature Dependence of the Optical Properties of a-si:H thin Films for Solar Cells

dc.contributor.authorBekele, Challa
dc.date.accessioned2018-06-20T09:12:20Z
dc.date.accessioned2023-11-09T11:23:21Z
dc.date.available2018-06-20T09:12:20Z
dc.date.available2023-11-09T11:23:21Z
dc.date.issued1996-06
dc.description.abstractIn the fundamental absorption region, near normal incidence reflectance Rand transmittance T measurements can provide information about optical properties of thin films [1] . Temperature dependent optical properties of p - , i - , n - layers of a-Si:H films have been studied. The behavior of reflectance R and transmittance T as a function of temperature of a-Si:H thin films is analyzed. From temperature dependence of Rand T the temperature dependence of the absorption coefficent «(I.) is calculated using Hishikawa relation. From the temperature dependent absorption coefficient, the variation of the optical energy gap of the films with temperature is determined. Finally its effect on solar cell applications is discusseden_US
dc.identifier.urihttp://10.90.10.223:4000/handle/123456789/2206
dc.language.isoenen_US
dc.publisherAddis Ababa Universityen_US
dc.subjectThin Films for Solar Cellsen_US
dc.titleTemperature Dependence of the Optical Properties of a-si:H thin Films for Solar Cellsen_US
dc.typeThesisen_US

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