Optical and Electrical Properties of A-SI:H Multilayer Solar Cells
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Date
1998-06
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Addis Ababa University
Abstract
The transmittance spectra of a-Si:H pin solar cell samples having different i-layer thickness
were measured with a Perkins Ehner Lambda 19 spectrometer. The spectra were simulated
with the SCOUTFIT computer program by making use of the Forouhi and Bloomer dielectric
fimction model to determine the values of the optical parameters (energy gap, refractive index
and layer thickness) of the different layer systems (glass, TCO, p-, i- and n-Iayers) of the
a-Si:H solar cell samples. The fitted values of the optical parameters are found to be in good
agreement with published values.
The I-V characteristics curves of a-Si:H solar cells were measured. The parameters J", V" , 11
and FF for the different samples, when the samples were illuminated with light of different
intensities are determined and compared with published results. The paper presents the
experimental results obtained from the transmittance spectra and the I-V characteristics
meaSUl'ements of the solar cell samples
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Optical and Electrical Properties