Minority Carrier Lifetime in Cltystalline and Polycrystalline Silicon Solar Cells

dc.contributor.advisorStutenbaeume, Ulrich (PhD)
dc.contributor.authorLewetegn, Elias
dc.date.accessioned2018-06-21T08:41:31Z
dc.date.accessioned2023-11-09T11:23:19Z
dc.date.available2018-06-21T08:41:31Z
dc.date.available2023-11-09T11:23:19Z
dc.date.issued1999-06
dc.description.abstractThe photoinduced open-circuit voltage decay technique was used to investigate the minority canier lifetime in crystalline and polycrystalline silicon solar cells. Tlus convenient investigation tecluuque allows a fast detennination of the minOlity canier lifetime in senUconductor matelials and is an impOltant technique to predict the solar cell perfOlmance. The decay curves were obtained with a xenon stroboscope lanlp and Nd:YAG laser and Nitrogen laser pulses as an excitation sourceen_US
dc.identifier.urihttp://10.90.10.223:4000/handle/123456789/2646
dc.language.isoenen_US
dc.publisherAddis Ababa Universityen_US
dc.subjectLifetime in Cltystalline and Polycrystalline Siliconen_US
dc.titleMinority Carrier Lifetime in Cltystalline and Polycrystalline Silicon Solar Cellsen_US
dc.typeThesisen_US

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