Radiative Lifetime and Internal Quantum Efficiency of small Scale Silicon Nanostructures

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Date

2009-06

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Addis Ababa University

Abstract

Nanosilicon (nanocrystal and porous) research is gaining tremendous attention in recent years due to the light emitting properties of the material. Improving efficiencies in radiative recombination and light extraction of this material enhances potential applications as microelectronic and optoelectronic devices with new operational capabilities. In this work we investigate the influence of quantum confinement and excitation laser pump flux on the optical parameters of silicon nanocrystal. Our work presents a new approach for the photoluminescence mechanism of silicon nanocrystal by using phenomenological formulations that explain the size and laser pump flux dependence of photoluminescence intensity, radiative lifetime and internal quantum efficiency. To investigate the mechanism of the photoluminescence we perform computer simulation using fortran programming. These results show that, miniaturizing the size and increasing laser pump flux strongly alters photoluminescence intensity, radiative lifetime and internal quantum efficiency of silicon nanocrystal. Our results have in well agreement with many other theoretical and experimental findings. Our model confirms photoluminescence emission intensity and internal quantum efficiency enhance due to quantum confinement and we can tune the emission spectral range across the visible by using proper sized silicon nanocrystal

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Keywords

Radiative Lifetime and Internal Quantum

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