Charge Transport Properties in Disordered Organic Semiconductors Monte Carlo Simulation
| dc.contributor.advisor | Demmeyu, Lemi (PhD) | |
| dc.contributor.author | Kelil, Seyfan | |
| dc.date.accessioned | 2022-02-09T12:52:03Z | |
| dc.date.accessioned | 2023-11-09T11:27:06Z | |
| dc.date.available | 2022-02-09T12:52:03Z | |
| dc.date.available | 2023-11-09T11:27:06Z | |
| dc.date.issued | 2021-06-03 | |
| dc.description.abstract | In this thesis, we have used a Monte Carlo simulation technique to study the charge carrier mobility as a function of charge carrier density and electric _eld in disordered organic semiconducting materials using the lattice model. Our simulations reveal that the charge carrier mobility versus charge carrier density at lower charge carrier density and disorder is constant. In contrast, at higher disordered and lower charge carrier density, the charge carrier mobility increases with charge carrier density. Therefore, the e_ect of the disorder parameter (^_ = _ kBT ) on the charge carrier mobility is more pronounced than the charge carrier density at lower charge carrier density. We studied a charge carrier mobility as a function of the electric _eld for the case of the regular grid and spatial disorder lattice site with di_erent lattice site spacing parameter r and the ratio of localization length to the lattice parameter (i. e, _=b). We show that a charge carrier mobility increases with an electric _eld for the case of the regular grid and spatial disorder lattice site of lower or equal values of lattice site spacing r to the ratio of _=b. But, at a higher value of lattice site spacing r to the ratio of _=b, the electric _eld dependence of charge carrier mobility for spatial disordered lattice sites di_ers from that of the regular grid case. We observed that both a localization length and lattice parameter are relevant for the electric _eld variation of charge carrier mobility in both the regular grid and spatial disordered lattice sites at lower or equal values of lattice site spacing r to the ratio of _=b cases. However, at higher values of the lattice site spacing r relative to the ratio of _=b, the only parameter responsible for the electric _eld dependence of charge carrier mobility is the localization length of disordered organic semiconducting materials. | en_US |
| dc.identifier.uri | http://10.90.10.223:4000/handle/123456789/29981 | |
| dc.language.iso | en | en_US |
| dc.publisher | Addis Ababa University | en_US |
| dc.subject | Charge Transport | en_US |
| dc.subject | Properties | en_US |
| dc.subject | Disordered Organic | en_US |
| dc.subject | Semiconductors | en_US |
| dc.subject | Monte Carlo Simulation | en_US |
| dc.title | Charge Transport Properties in Disordered Organic Semiconductors Monte Carlo Simulation | en_US |
| dc.type | Thesis | en_US |