Photovoltaic Properties of Poly[3-(4-0ctylphenyl)-2,2'-Bithiophene] (PTOPT)
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Date
1998-06
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Addis Ababa University
Abstract
The purpose of tlus study is to investigate the photovoltaic effect of the undoped
poly[3-( 4-octylphenyl)-2,2'-bithiophene 1 (PTOPT) by performing the current density-voltage
(J-V) measurements in the dark and under illumination. The Al/PTOPT junction forms a
Schottky barrier. The semiconductor property of PTOPT was confirmed from optical
absorption spectroscopy. The electrical and photovoltaic properties of an Al/PTOPT/ITO
device were investigated by the J-V measurement in the dark and under illumination. From
J-V in the dark, the reverse saturation current density, Jo = 6.7 x 1O-14Alcm2 was obtained.
The diode ideality factor n and the barrier height <1\ are 4.0 and 1.2V, respectively. Optical
absorption reveals that the band gap, Eg , of PTOPT is about 2.0eV. From photovoltaic
characterization, the open-circuit voltage and the sholt-circuit current density of the device are
Voc = O.75Vand Jsc = 2.5 x 1O-5Alcm2 , respectively. The effective area of the cell was
0.06cm'. The fill-factor and the power conversion efficiency obtained was 0.2 and 0.004%
respectively. The illumination of the sample was made from the ITO side with a white light of
intensity about 100m W/cm2
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Photovoltaic Properties