Charge Transport Across Metal P-Type Semiconductor Interfaces
| dc.contributor.advisor | Elfagd, Yitagesu (PhD) | |
| dc.contributor.author | Mekonnen, Ermias | |
| dc.date.accessioned | 2019-11-05T06:50:34Z | |
| dc.date.accessioned | 2023-11-09T11:25:55Z | |
| dc.date.available | 2019-11-05T06:50:34Z | |
| dc.date.available | 2023-11-09T11:25:55Z | |
| dc.date.issued | 2019-07-03 | |
| dc.description.abstract | In this study, we considered the thermionic emission, field emission and tunneling and we derived current density as a functions of different parameters such as, temperature, barrier height, work function, bias voltage and dopant concentration for thermionic emission, field emission and tunneling enhanced electron transport across metal and P-type semiconductor interfaces. The result shows that the thermionic current density is increasing exponentially as a functions of bias voltage, the current density is also increasing as a quadratic functions of temperature and current density is increasing linearly as a functions of dopant concentration. Therefore, we carry out investigation how these factors affect the current density and we solve the current density analytically with a given parameters. The results are plotted using gnuplot. | en_US |
| dc.identifier.uri | http://10.90.10.223:4000/handle/123456789/19780 | |
| dc.language.iso | en | en_US |
| dc.publisher | Addis Ababa University | en_US |
| dc.subject | Charge Transport Across | en_US |
| dc.subject | Metal P-Type | en_US |
| dc.subject | Semiconductor Interfaces | en_US |
| dc.title | Charge Transport Across Metal P-Type Semiconductor Interfaces | en_US |
| dc.type | Thesis | en_US |